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Vishay IRLD120PBF

Vishay IRLD120PBF

MPNIRLD120PBF
End of Life

MOSFET N-CH 100V 1.3A 4DIP

$1.78Ref. price · indicative, final on quote
Packaging4-DIP (0.300", 7.62mm)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRLD120PBF specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4V, 5V
Current - continuous drain (Id) @ 25°C1.3A (Ta)
Power dissipation1.3W (Ta)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±10V
TechnologyMOSFET (Metal Oxide)
Case4-DIP (0.300\", 7.62mm)
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs270mOhm @ 780mA, 5V
Gate charge (Qg) (Max) @ vgs12 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds490 pF @ 25 V