IRL640PBF

Vishay

IRL640PBF, N-Channel MOSFET, 200V Vdss, 17A Id, 180mOhm Rds(on) @ 10A 5V, 66nC Qg, TO-220-3, -55°C to 150°C, Active, ROHS3.

Vishay IRL640PBF
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[IN STOCK] In Stock: 6 pcs
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Technical specifications

IRL640PBF specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)4V, 5V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±10V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs180mOhm @ 10A, 5V
Gate charge (Qg) (Max) @ vgs66 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds1800 pF @ 25 V

Technical details

200 V, 17 A N-channel — logic-level gate drive

The key spec for a field swap or a new design is the 180 mOhm maximum on-resistance at 10 A with only 5 V on the gate — that is a logic-level threshold, so a 5 V microcontroller output or a standard gate driver can turn it fully on without a boost stage. Gate charge is 66 nC at 5 V, and input capacitance is 1800 pF at 25 V drain-source — numbers that tell you the switching speed is moderate, not ultrafast, but the drive current requirement is comfortable for a small driver IC or a totem-pole from a 5 V rail.

Through-hole TO-220 — field-replaceable, no hot-air needed

The TO-220-3 (TO-220AB) package is a through-hole part with a metal tab for heatsinking. On a customer site, you can swap this with a screwdriver and a soldering iron — no hot-air station, no reflow profile. The tab is the drain, so the heatsink pad or chassis mount needs electrical isolation unless the system uses the tab as the common drain node. Maximum power dissipation is 125 W at case temperature, but the real thermal limit depends on the heatsink and airflow.

IRL640PBF
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