IRFRC20PBF

Vishay

MOSFET N-CH 600V 2A DPAK

Vishay IRFRC20PBF
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Technical specifications

IRFRC20PBF specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2A (Tc)
Power dissipation2.5W (Ta), 42W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs4.4Ohm @ 1.2A, 10V
Gate charge (Qg) (Max) @ vgs18 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds350 pF @ 25 V
IRFRC20PBF
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