IRFR9110TRPBF

Vishay

MOSFET P-CH 100V 3.1A DPAK

Vishay IRFR9110TRPBF
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[IN STOCK] In Stock: 798 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFR9110TRPBF specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3.1A (Tc)
Power dissipation2.5W (Ta), 25W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.2Ohm @ 1.9A, 10V
Gate charge (Qg) (Max) @ vgs8.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds200 pF @ 25 V
IRFR9110TRPBF
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