IRFR120PBF

Vishay

MOSFET N-CH 100V 7.7A DPAK

Vishay IRFR120PBF
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Technical specifications

IRFR120PBF specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7.7A (Tc)
Power dissipation2.5W (Ta), 42W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs270mOhm @ 4.6A, 10V
Gate charge (Qg) (Max) @ vgs16 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds360 pF @ 25 V
IRFR120PBF
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