IRFPG30PBF

Vishay

MOSFET N-CH 1000V 3.1A TO247-3

Vishay IRFPG30PBF
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[IN STOCK] In Stock: 119 pcs
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Technical specifications

IRFPG30PBF specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1000 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3.1A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs5Ohm @ 1.9A, 10V
Gate charge (Qg) (Max) @ vgs80 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds980 pF @ 25 V
IRFPG30PBF
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