IRFD9110PBF
Vishay
MOSFET P-CH 100V 700MA 4DIP
[IN STOCK] In Stock: 1 pcs
MOQ 1 · Bulk · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | P-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 700mA (Ta) |
| Power dissipation | 1.3W (Ta) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 4-DIP (0.300\", 7.62mm) |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 1.2Ohm @ 420mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 8.7 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 200 pF @ 25 V |
IRFD9110PBF
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