Vishay IRFD110PBF
MPNIRFD110PBF
End of Life
MOSFET N-CH 100V 1A 4DIP
$1.72Ref. price · indicative, final on quote
Packaging4-DIP (0.300", 7.62mm)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 1A (Ta) |
| Power dissipation | 1.3W (Ta) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 4-DIP (0.300\", 7.62mm) |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 540mOhm @ 600mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 8.3 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 180 pF @ 25 V |