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Vishay IRFD020PBF

Vishay IRFD020PBF

MPNIRFD020PBF
End of Life

MOSFET N-CH 50V 2.4A 4DIP

$1.62Ref. price · indicative, final on quote
Packaging4-DIP (0.300", 7.62mm)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRFD020PBF specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage50 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2.4A (Tc)
Power dissipation1W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case4-DIP (0.300\", 7.62mm)
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs100mOhm @ 1.4A, 10V
Gate charge (Qg) (Max) @ vgs24 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds400 pF @ 25 V