IRFBF30PBF

Vishay

MOSFET N-CH 900V 3.6A TO220AB

Vishay IRFBF30PBF
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[IN STOCK] In Stock: 8 pcs
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Technical specifications

IRFBF30PBF specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingThrough Hole
Drain to source voltage900 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3.6A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs3.7Ohm @ 2.2A, 10V
Gate charge (Qg) (Max) @ vgs78 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1200 pF @ 25 V
IRFBF30PBF
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