IRFBC40PBF

Vishay

Infineon IRFBC40PBF, N-Channel MOSFET, 600 Vdss, 6.2A Id, 1.2 Ohm Rds(on) at 10V, 125W, TO-220-3, Through Hole, -55°C to 150°C

Vishay IRFBC40PBF
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[IN STOCK] In Stock: 6 pcs
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Technical specifications

IRFBC40PBF specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6.2A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.2Ohm @ 3.7A, 10V
Gate charge (Qg) (Max) @ vgs60 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1300 pF @ 25 V

Technical details

600 V N-channel — the primary switch for offline supplies

The IRFBC40PBF is an N-channel power MOSFET rated for 600 V drain-to-source breakdown voltage, making it a primary switch candidate in offline AC-DC converters, PFC stages, and flyback topologies where the bus voltage can exceed 400 V under normal conditions and spike during line transients.

Gate threshold voltage is specified at 4 V max with 250 µA drain current, and the recommended drive voltage for achieving the rated Rds(on) is 10 V — a standard 12 V or 15 V gate drive rail from a PWM controller or driver IC works directly.

The junction temperature range spans -55 °C to 150 °C, covering industrial and military-temperature environments — the 150 °C upper limit allows the junction to rise above the case temperature under heavy load without immediate derating, though the Rds(on) doubles at 125 °C junction. Packaged in a TO-220-3 through-hole case with a TO-220AB supplier device package, the IRFBC40PBF mounts into a standard 0.100-inch pitch PCB footprint and accepts a clip-on or screw-mounted heatsink for thermal management.

It is ROHS3 compliant, consistent with the lead-free (PbF) suffix designation. No official successor or second-source cross-reference is listed in the manufacturer's lifecycle documentation.

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