IRF9610SPBF

Vishay

MOSFET P-CH 200V 1.8A D2PAK

Vishay IRF9610SPBF
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Technical specifications

IRF9610SPBF specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C1.8A (Tc)
Power dissipation3W (Ta), 20W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs3Ohm @ 900mA, 10V
Gate charge (Qg) (Max) @ vgs11 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds170 pF @ 25 V
IRF9610SPBF
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