IRF9510SPBF

Vishay

MOSFET P-CH 100V 4A D2PAK

Vishay IRF9510SPBF
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Technical specifications

IRF9510SPBF specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4A (Tc)
Power dissipation43W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.2Ohm @ 2.4A, 10V
Gate charge (Qg) (Max) @ vgs8.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds200 pF @ 25 V
IRF9510SPBF
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