Vishay G3SBA20-E3/51 — Discrete Semiconductors
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Vishay G3SBA20-E3/51 Bridge Rectifier, 200V, 2.3A, GBU

MPN G3SBA20-E3/51
End of Life Spot Stock · 24-48h Dispatch 100% Original Sealed

Vishay G3SBA20-/51 single-phase bridge rectifier, 200 V peak reverse, 2.3 A average rectified, 1 Vf at 2 A, GBU through-hole package, bulk.

In Stock: 400 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$1.64 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$1.64
10+ pcs
$1.48
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$1.34
100+ pcs
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$1.64 / ea

400 in stock — maximum per order · 3–4 days lead time

$1.48 / ea from 10 pcs

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[SPEC] Essential Parameters Snapshot Full Specifications (10)
Package / Case 4-SIP, GBU

Full Technical Specifications

10 Parameters
G3SBA20-E3/51 specifications
Parameter / AttributeSpecification / Value
Diode typeSingle Phase
MountingThrough Hole
Voltage - peak reverse200 V
Voltage - forward (Vf) (Max) @ if1 V @ 2 A
Current - reverse leakage @ vr5 µA @ 200 V
Current - average rectified2.3 A
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
TechnologyStandard
Case4-SIP, GBU
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Technical Details & Description

The G3SBA20-E3/51: The Vishay G3SBA20-/51 is a single-phase bridge rectifier in the standard GBU through-hole package, built with standard silicon technology. It delivers 2.3 A average rectified output (Io) and withstands 200 V peak reverse voltage (VRRM).

Forward drop and conduction loss

Maximum forward voltage is 1 V at 2 A forward current — at the rated 2.3 A average, conduction loss runs about 2.3 W.

Reverse leakage and blocking stability

Reverse leakage is specified at 5 µA maximum when the full 200 V blocking voltage is applied. At elevated junction temperature leakage doubles roughly every 10°C — at 125°C expect leakage in the tens of microamps, still negligible for most offline supplies and motor-drive DC bus precharge circuits.

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