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Vishay Siliconix SI48 Series

96 variants · Vishay Siliconix

About the Vishay Siliconix SI48 Series

The Vishay Siliconix SI48 Series series groups 96 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. The listed variants share a common case of 8-SOIC (0.154\", 3.90mm Width), FET feature of - and mounting of Surface Mount. Variants differ by current - continuous drain (Id) @ 25°C, drain to source voltage and drive voltage (Max rds on, min rds on), so you can match the exact current - continuous drain (Id) @ 25°C your application requires using the selection guide below.

Select a variant by

Current - continuous drain (Id) @ 25°C
2.7A (Ta) · 6A (Ta) · 6.5A (Ta) · 8.9A (Ta) · 11A (Ta) · 12A (Ta) · 13A (Tc) · 17A (Ta) · 28A (Tc)
Drain to source voltage
12 V · 20 V · 30 V · 60 V · 150 V
Drive voltage (Max rds on, min rds on)
2.5V, 4.5V · 4.5V, 10V · 6V, 10V
FET type
N-Channel · P-Channel
Gate charge (Qg) (Max) @ vgs
13 nC @ 5 V · 21 nC @ 10 V · 25 nC @ 4.5 V · 27 nC @ 10 V · 30 nC @ 4.5 V · 38 nC @ 10 V · 65 nC @ 10 V · 70 nC @ 4.5 V · 100 nC @ 10 V
Operating temperature
-55°C~150°C(TJ) · -55°C~175°C(TJ)
Power dissipation
1.3W (Ta) · 1.4W (Ta) · 1.5W (Ta) · 1.6W (Ta) · 1.7W (Ta) · 2.5W (Ta), 5.6W (Tc) · 3W (Ta), 6.25W (Tc)
Rds on (Max) @ id, vgs
3.5mOhm @ 25A, 4.5V · 4.2mOhm @ 20A, 10V · 5.5mOhm @ 17A, 4.5V · 7mOhm @ 16A, 10V · 11mOhm @ 12A, 10V · 18mOhm @ 10A, 10V · 18.5mOhm @ 9A, 10V · 22mOhm @ 6A, 10V · 85mOhm @ 3.5A, 10V

Shared specifications

Case
8-SOIC (0.154\", 3.90mm Width)
FET feature
-
Mounting
Surface Mount
Package
Tape & Reel (TR); Cut Tape (CT)
Technology
MOSFET (Metal Oxide)

Variant comparison

ParameterSI4800BDY-T1-E3SI4800BDY-T1-GE3SI4835DDY-T1-E3SI4842BDY-T1-E3SI4842BDY-T1-GE3SI4848DY-T1-E3
Current - continuous drain (Id) @ 25°C6.5A (Ta)6.5A (Ta)13A (Tc)28A (Tc)28A (Tc)2.7A (Ta)
Drain to source voltage30 V30 V30 V30 V30 V150 V
Drive voltage (Max rds on, min rds on)4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V6V, 10V
FET typeN-ChannelN-ChannelP-ChannelN-ChannelN-ChannelN-Channel
Gate charge (Qg) (Max) @ vgs13 nC @ 5 V13 nC @ 5 V65 nC @ 10 V100 nC @ 10 V100 nC @ 10 V21 nC @ 10 V
Operating temperature-55°C~150°C(TJ)-55°C~150°C(TJ)-55°C~150°C(TJ)-55°C~150°C(TJ)-55°C~150°C(TJ)-55°C~150°C(TJ)
Power dissipation1.3W (Ta)1.3W (Ta)2.5W (Ta), 5.6W (Tc)3W (Ta), 6.25W (Tc)3W (Ta), 6.25W (Tc)1.5W (Ta)
Rds on (Max) @ id, vgs18.5mOhm @ 9A, 10V18.5mOhm @ 9A, 10V18mOhm @ 10A, 10V4.2mOhm @ 20A, 10V4.2mOhm @ 20A, 10V85mOhm @ 3.5A, 10V

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