SI4848DY-T1-GE3
Vishay Siliconix · TrenchFET® Series
MOSFET N-CH 150V 2.7A 8SO
[IN STOCK] In Stock: 1,124 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 150 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 2.7A (Ta) |
| Power dissipation | 1.5W (Ta) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 2V @ 250µA (Min) |
| Rds on (Max) @ id, vgs | 85mOhm @ 3.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 21 nC @ 10 V |
SI4848DY-T1-GE3
[ALLOC] verified