Vishay Siliconix SI4866DY-T1-E3
MPNSI4866DY-T1-E3
Active
MOSFET N-CH 12V 11A 8SO
$2.2400Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 12 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 11A (Ta) |
| Power dissipation | 1.6W (Ta) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 600mV @ 250µA (Min) |
| Rds on (Max) @ id, vgs | 5.5mOhm @ 17A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 30 nC @ 4.5 V |