Vishay Siliconix SI4800BDY-T1-GE3
MPNSI4800BDY-T1-GE3
Active
MOSFET N-CH 30V 6.5A 8SO
$0.9400Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 6.5A (Ta) |
| Power dissipation | 1.3W (Ta) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 1.8V @ 250µA |
| Rds on (Max) @ id, vgs | 18.5mOhm @ 9A, 10V |
| Gate charge (Qg) (Max) @ vgs | 13 nC @ 5 V |