SI4936CDY-T1-GE3
Vishay Siliconix · TrenchFET® Series
MOSFET 2N-CH 30V 5.8A 8-SOIC
[IN STOCK] In Stock: 30 pcs
MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® |
| Mounting | Surface Mount |
| Drain to source voltage | 30V |
| Current - continuous drain (Id) @ 25°C | 5.8A |
| Power - max | 2.3W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Logic Level Gate |
| Manufacturer | Vishay Siliconix |
| Configuration | 2 N-Channel (Dual) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 40mOhm @ 5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 9nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 325pF @ 15V |
SI4936CDY-T1-GE3
[ALLOC] verified