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Vishay Siliconix SI4925DDY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4925DDY-T1-GE3

MPNSI4925DDY-T1-GE3
Active
$1.0100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4925DDY-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET type2 P-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C8A
Power - max5W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs29mOhm @ 7.3A, 10V
Gate charge (Qg) (Max) @ vgs50nC @ 10V
Input capacitance (Ciss) (Max) @ vds1350pF @ 15V