SI4900DY-T1-E3
Vishay Siliconix
[IN STOCK] In Stock: 23 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® |
| FET type | 2 N-Channel (Dual) |
| Mounting | Surface Mount |
| Drain to source voltage | 60V |
| Current - continuous drain (Id) @ 25°C | 5.3A |
| Power - max | 3.1W |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Logic Level Gate |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 58mOhm @ 4.3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 20nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 665pF @ 15V |
SI4900DY-T1-E3
[ALLOC] verified