SI4896DY-T1-E3
Vishay Siliconix
[IN STOCK] In Stock: 14 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 6.7A (Ta) |
| Power dissipation | 1.56W (Ta) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 2V @ 250µA (Min) |
| Rds on (Max) @ id, vgs | 16.5mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 41 nC @ 10 V |
SI4896DY-T1-E3
[ALLOC] verified