SI4848BDY-T1-GE3
Vishay Siliconix
[IN STOCK] In Stock: 10 pcs
MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 150 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 3.7A (Ta), 5A (Tc) |
| Power dissipation | 2.5W (Ta), 4.5W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 89mOhm @ 3.7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 9 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 400 pF @ 75 V |
SI4848BDY-T1-GE3
[ALLOC] verified