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Vishay Siliconix SI4848BDY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4848BDY-T1-GE3

MPNSI4848BDY-T1-GE3
Active
$0.6900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4848BDY-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C3.7A (Ta), 5A (Tc)
Power dissipation2.5W (Ta), 4.5W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs89mOhm @ 3.7A, 10V
Gate charge (Qg) (Max) @ vgs9 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds400 pF @ 75 V