SI4838DY-T1-E3

Vishay Siliconix · TrenchFET® Series

MOSFET N-CH 12V 17A 8SO

Vishay Siliconix SI4838DY-T1-E3
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SI4838DY-T1-E3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage12 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C17A (Ta)
Power dissipation1.6W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id600mV @ 250µA (Min)
Rds on (Max) @ id, vgs3mOhm @ 25A, 4.5V
Gate charge (Qg) (Max) @ vgs60 nC @ 4.5 V
SI4838DY-T1-E3
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