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Vishay Siliconix SI4630DY-T1-E3 — Discrete Semiconductors

Vishay Siliconix SI4630DY-T1-E3

MPNSI4630DY-T1-E3
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$2.0400Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4630DY-T1-E3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage25 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C40A (Tc)
Power dissipation3.5W (Ta), 7.8W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs2.7mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs161 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6670 pF @ 15 V