SI4564DY-T1-GE3

Vishay Siliconix

Vishay Siliconix SI4564DY-T1-GE3
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[IN STOCK] In Stock: 54 pcs
$2.91/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SI4564DY-T1-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage40V
Current - continuous drain (Id) @ 25°C10A, 9.2A
Power - max3.1W, 3.2W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs17.5mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs31nC @ 10V
Input capacitance (Ciss) (Max) @ vds855pF @ 20V
SI4564DY-T1-GE3
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