SI4559ADY-T1-GE3

Vishay Siliconix

Vishay Siliconix SI4559ADY-T1-GE3
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SI4559ADY-T1-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C5.3A, 3.9A
Power - max3.1W, 3.4W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs58mOhm @ 4.3A, 10V
Gate charge (Qg) (Max) @ vgs20nC @ 10V
Input capacitance (Ciss) (Max) @ vds665pF @ 15V
SI4559ADY-T1-GE3
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