SI4447ADY-T1-GE3

Vishay Siliconix

Vishay Siliconix SI4447ADY-T1-GE3
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SI4447ADY-T1-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C7.2A (Tc)
Power dissipation4.2W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs45mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs38 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds970 pF @ 20 V
SI4447ADY-T1-GE3
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