SI4401BDY-T1-GE3

Vishay Siliconix · TrenchFET® Series

MOSFET P-CH 40V 8.7A 8SO

Vishay Siliconix SI4401BDY-T1-GE3
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SI4401BDY-T1-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C8.7A (Ta)
Power dissipation1.5W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs14mOhm @ 10.5A, 10V
Gate charge (Qg) (Max) @ vgs55 nC @ 5 V
SI4401BDY-T1-GE3
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