SI4288DY-T1-GE3
Vishay Siliconix · TrenchFET® Series
MOSFET 2N-CH 40V 9.2A 8SO
[IN STOCK] In Stock: 19 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® |
| FET type | 2 N-Channel (Dual) |
| Mounting | Surface Mount |
| Drain to source voltage | 40V |
| Current - continuous drain (Id) @ 25°C | 9.2A |
| Power - max | 3.1W |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Logic Level Gate |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 20mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 15nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 580pF @ 20V |
SI4288DY-T1-GE3
[ALLOC] verified