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Vishay Siliconix SI4204DY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4204DY-T1-GE3

MPNSI4204DY-T1-GE3
Active

MOSFET 2N-CH 20V 19.8A 8-SOIC

$1.9300Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4204DY-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C19.8A
Power - max3.25W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.4V @ 250µA
Rds on (Max) @ id, vgs4.6mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs45nC @ 10V
Input capacitance (Ciss) (Max) @ vds2110pF @ 10V