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Vishay Siliconix SI4190ADY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4190ADY-T1-GE3

MPNSI4190ADY-T1-GE3
Active
$1.8900Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4190ADY-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C18.4A (Tc)
Power dissipation3W (Ta), 6W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.8V @ 250µA
Rds on (Max) @ id, vgs8.8mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs67 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1970 pF @ 50 V