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Vishay Siliconix SI4174DY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4174DY-T1-GE3

MPNSI4174DY-T1-GE3
Active

MOSFET N-CH 30V 17A 8SO

$0.9200Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

SI4174DY-T1-GE3 Technical Specifications
ParameterValue
SeriesTrenchFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation2.5W (Ta), 5W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs9.5mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs27 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds985 pF @ 15 V