Vishay Siliconix SI4143DY-T1-GE3
MPNSI4143DY-T1-GE3
Active
MOSFET P-CHANNEL 30V 25.3A 8SO
$0.3080Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 25.3A (Tc) |
| Power dissipation | 6W (Tc) |
| Operating temperature | -55°C~150°C(TA) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 6.2mOhm @ 12A, 10V |
| Gate charge (Qg) (Max) @ vgs | 167 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6630 pF @ 15 V |