Skip to main content
Vishay Siliconix SI4124DY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4124DY-T1-GE3

MPNSI4124DY-T1-GE3
Active
$2.1100Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4124DY-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C20.5A (Tc)
Power dissipation2.5W (Ta), 5.7W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs7.5mOhm @ 14A, 10V
Gate charge (Qg) (Max) @ vgs77 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3540 pF @ 20 V