SI4090BDY-T1-GE3
Vishay Siliconix · TrenchFET® Series
N-CHANNEL 100-V (D-S) MOSFET SO-
[IN STOCK] In Stock: 22 pcs
MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 12.2A (Ta), 18.7A (Tc) |
| Power dissipation | 3.1W (Ta), 7.4W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 10mOhm @ 12.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 70 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3570 pF @ 50 V |
SI4090BDY-T1-GE3
[ALLOC] verified