IRF740STRLPBF

Vishay Siliconix

MOSFET N-CH 400V 10A D2PAK

Vishay Siliconix IRF740STRLPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRF740STRLPBF specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage400 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation3.1W (Ta), 125W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs550mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs63 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1400 pF @ 25 V
IRF740STRLPBF
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