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Vishay General Semiconductor - Diodes Division TVR10J-E3/54 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division TVR10J-E3/54

MPNTVR10J-E3/54
Obsolete
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

TVR10J-E3/54 Technical Specifications
ParameterValue
SeriesSUPERECTIFIER®
Diode typeStandard
Mounting typeThrough Hole
Voltage - DC reverse (Vr)600 V
Current - reverse leakage @ vr10 µA @ 600 V
Current - average rectified1A
Operating temperature - junction-65°C~175°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageBulk
CaseDO-204AL, DO-41, Axial
Capacitance @ vr, f15pF @ 4V, 1MHz
Reverse recovery time300 µs