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Vishay General Semiconductor - Diodes Division S1MHM3_A/I — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division S1MHM3_A/I

MPNS1MHM3_A/I
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$0.0700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

S1MHM3_A/I specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)1000 V
Voltage - forward (Vf) (Max) @ if1.1 V @ 1 A
Current - reverse leakage @ vr5 µA @ 1000 V
Current - average rectified1A
Operating temperature - junction-55°C~150°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageTape & Reel (TR)
CaseDO-214AC, SMA
Capacitance @ vr,12pF @ 4V, 1MHz
Reverse recovery time1.8 µs