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Vishay General Semiconductor - Diodes Division S1MHE3_A/H — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division S1MHE3_A/H

MPNS1MHE3_A/H
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DIODE GEN PURP 1KV 1A DO214AC

$0.3600Ref. price · indicative, final on quote
PackagingDO-214AC, SMA
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q100
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

S1MHE3_A/H specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)1000 V
Voltage - forward (Vf) (Max) @ if1.1 V @ 1 A
Current - reverse leakage @ vr5 µA @ 1000 V
Current - average rectified1A
Operating temperature - junction-55°C ~ 150°C
GradeAutomotive
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyStandard
QualificationAEC-Q101
CaseDO-214AC, SMA
Capacitance @ vr,12pF @ 4V, 1MHz
Reverse recovery time1.8 µs