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Vishay General Semiconductor - Diodes Division RS1GHE3_A/I — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division RS1GHE3_A/I

MPNRS1GHE3_A/I
Active

DIODE GEN PURP 400V 1A DO214AC

$0.4900Ref. price · indicative, final on quote
PackagingDO-214AC, SMA
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RS1GHE3_A/I specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)400 V
Voltage - forward (Vf) (Max) @ if1.3 V @ 1 A
Current - reverse leakage @ vr5 µA @ 400 V
Current - average rectified1A
Operating temperature - junction-55°C~150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseDO-214AC, SMA
Capacitance @ vr,10pF @ 4V, 1MHz
Reverse recovery time150 ns