Skip to main content
Vishay General Semiconductor - Diodes Division BZT52C9V1-HE3-18 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BZT52C9V1-HE3-18

MPNBZT52C9V1-HE3-18
Active
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BZT52C9V1-HE3-18 specifications
ParameterValue
SeriesAutomotive, AEC-Q101, BZT52
MountingSurface Mount
Voltage - zener (Nom)9.1 V
Current - reverse leakage @ vr100 nA @ 7 V
Power - max410 mW
Operating temperature-55°C~150°C
PackageTape & Reel (TR); Cut Tape (CT)
Tolerance±5%
CaseSOD-123
Impedance (Max)4.8 Ohms