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Vishay General Semiconductor - Diodes Division BZT52C3V9-HE3_A-18 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BZT52C3V9-HE3_A-18

MPNBZT52C3V9-HE3_A-18
Active
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BZT52C3V9-HE3_A-18 specifications
ParameterValue
SeriesBZT52
MountingSurface Mount
Voltage - zener (Nom)3.9 V
Current - reverse leakage @ vr2 µA @ 1 V
Power - max300 mW
Operating temperature150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR)
Tolerance±5%
QualificationAEC-Q101
CaseSOD-123
Impedance (Max)95 Ohms