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Vishay General Semiconductor - Diodes Division BZT52C10-E3-08 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BZT52C10-E3-08

MPNBZT52C10-E3-08
Active

DIODE ZENER 10V 410MW SOD123

PackagingSOD-123
RoHSROHS3 Compliant
SeriesBZT52
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BZT52C10-E3-08 specifications
ParameterValue
SeriesBZT52
MountingSurface Mount
Voltage - zener (Nom)10 V
Current - reverse leakage @ vr100 nA @ 7.5 V
Power - max410 mW
Operating temperature-55°C~150°C
PackageTape & Reel (TR); Cut Tape (CT)
Tolerance±5%
CaseSOD-123
Impedance (Max)5.2 Ohms