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Vishay General Semiconductor - Diodes Division BYWF29-50HE3_A/P — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BYWF29-50HE3_A/P

MPNBYWF29-50HE3_A/P
Active
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYWF29-50HE3_A/P specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)50 V
Voltage - forward (Vf) (Max) @ if1.3 V @ 20 A
Current - reverse leakage @ vr10 µA @ 50 V
Current - average rectified8A
Operating temperature - junction-65°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseTO-220-2 Full Pack, Isolated Tab
Reverse recovery time25 ns