BYWF29-200HE3_A-P
Vishay General Semiconductor - Diodes Division BYWF29-200HE3_A/P
MPNBYWF29-200HE3_A/P
Active
$0.7920Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Diode type | Standard |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 200 V |
| Voltage - forward (Vf) (Max) @ if | 1.3 V @ 20 A |
| Current - reverse leakage @ vr | 10 µA @ 200 V |
| Current - average rectified | 8A |
| Operating temperature - junction | -65°C~150°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tube |
| Case | TO-220-2 Full Pack, Isolated Tab |
| Reverse recovery time | 25 ns |