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Vishay General Semiconductor - Diodes Division BYWB29-50HE3_A/I — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BYWB29-50HE3_A/I

MPNBYWB29-50HE3_A/I
Last Buy
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYWB29-50HE3_A/I specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)50 V
Voltage - forward (Vf) (Max) @ if1.3 V @ 20 A
Current - reverse leakage @ vr10 µA @ 50 V
Current - average rectified8A
Operating temperature - junction-65°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR)
TechnologyStandard
CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Reverse recovery time25 ns