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Vishay General Semiconductor - Diodes Division BYWB29-200HE3_A/P — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BYWB29-200HE3_A/P

MPNBYWB29-200HE3_A/P
Active
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYWB29-200HE3_A/P specifications
ParameterValue
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)200 V
Voltage - forward (Vf) (Max) @ if1.3 V @ 20 A
Current - reverse leakage @ vr10 µA @ 200 V
Current - average rectified8A
Operating temperature - junction-65°C~150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Reverse recovery time25 ns