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Vishay General Semiconductor - Diodes Division BYW55-TAP — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BYW55-TAP

MPNBYW55-TAP
Active

DIODE AVALANCHE 800V 2A SOD57

$0.6400Ref. price · indicative, final on quote
PackagingSOD-57, Axial
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYW55-TAP specifications
ParameterValue
Diode typeAvalanche
MountingThrough Hole
Voltage - DC reverse (Vr)800 V
Voltage - forward (Vf) (Max) @ if1 V @ 1 A
Current - reverse leakage @ vr1 µA @ 800 V
Current - average rectified2A
Operating temperature - junction-55°C~175°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageCut Tape (CT); Tape & Box (TB)
CaseSOD-57, Axial
Reverse recovery time4 µs