BYW29-200-E3/45
Vishay General Semiconductor - Diodes Division
[IN STOCK] In Stock: 19 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Diode type | Standard |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 200 V |
| Voltage - forward (Vf) (Max) @ if | 1.3 V @ 20 A |
| Current - reverse leakage @ vr | 10 µA @ 200 V |
| Current - average rectified | 8A |
| Operating temperature - junction | -65°C~150°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tube |
| Case | TO-220-2 |
| Capacitance @ vr, | 45pF @ 4V, 1MHz |
| Reverse recovery time | 25 ns |
BYW29-200-E3/45
[ALLOC] verified